PM75CBS060 MITSUBISHI IGBT IPM

Transistor module MITSUBISHI ELECTRIC PM75CBS060 for sale. IGBT IPM 75A 600v. This transistor IGBT MITSUBISHI ELECTRIC PM75CBS060 is ready to replace your defective part.

An IGBT cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. Cross section of a typical IGBT showing internal connection of MOSFET and Bipolar DeviceThis additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. This connection results in a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship increase in forward conduction loss compared to blocking voltage capability of the device. MITSUBISHI ELECTRIC PM75CBS060