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A50L-0001-0302 2MBI200NR-060 Transistor Module
Starting at €200.00 €200.00
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FANUC Transistor module A50L-0001-0302 for sale as brand new in box.
FUJI ELECTRIC IGBT Module 2MBI200NR-060 ready to replace your
defectives IGBT modules on your FANUC Servo drives, Fanuc Spindles
drives or other electric system. All of the FANUC A50L-0001-0302 Transistors modules comes new and tested.
Caracteristics of this FUJI Electric IGBT Module 2MBI200NR-060 : 200A, 600 Volts IGBT Series. (PDF - A50L-0001-0302 2MBI200NR-060)
An IGBTÂ 2MBI200NR-060 cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. This connection results in a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship increase in forward conduction loss compared to blocking voltage capability of the device. A50L-0001-0302
Caracteristics of this FUJI Electric IGBT Module 2MBI200NR-060 : 200A, 600 Volts IGBT Series. (PDF - A50L-0001-0302 2MBI200NR-060)
An IGBTÂ 2MBI200NR-060 cell is constructed similarly to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. This connection results in a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship increase in forward conduction loss compared to blocking voltage capability of the device. A50L-0001-0302
Availability | Immediate shipment |
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Weight | 0.08 kgs |
Delivery options
Express delivery to 220 countries
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DHL ExpressFind out moreDHL Worldwide Express - 24H/48H Express delivery to 220 countries, delivered against Proof of Signature. - Tracking Number to track it on DHL network.
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UPS ExpressFind out moreUPS Worldwide Express - 24H/48H Express delivery to 220 countries, delivered against Proof of Signature. - Tracking Number to track it on UPS network.
Standard delivery to 72 countries
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DHL SelectFind out moreStandard delivery by DHL Select for EUROPE only (48H-72H depending of your country in EUROPE) with Proof of Signature at the delivery. - Tracking Number to track it online on DHL network.
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Colissimo Intl.Find out moreEconomy/Standard International post (4 to 7 days, depending of your country) Delivered with a proof of signature. Tracking Number is provided for traceability on the French Colissimo postal network & your Country local postal service.
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